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Power Mosfet IPAN80R280P7 TO-220-3 whole package

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    MPN IPAN80R280P7XKSA1
    Other # IPAN80R280P7
    Mfr. Infineon
    Oneyac # A-IPAN80R280P7XKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 whole package

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drain-Source Voltage (Vdss) 800V
    Input capacitance (Ciss) (maximum) at different Vds 1200pF @ 500V
    Power dissipation (maximum) 30W(Tc)
    Operating temperature -55°C ~ 150°C(TJ)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    technology MOSFET (metal oxide)
    Vgs(th) (maximum) when different Id 3.5V @ 360uA
    Current at 25°C-Continuous Drain (Id) 17A(Tc)
    Package/Enclosure TO-220-3 whole package
    On resistance at different Id and Vgs (maximum) 280 milliohm @ 7.2A, 10V
    Gate charge at different VGS (QG) (maximum) 36nC @ 10V
    fet type n channel
    Vgs(Max) ±20V
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