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Power MOSFET IPAN80R450P7 TO-220-3 full package

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    MPN IPAN80R450P7XKSA1
    Other # IPAN80R450P7
    Mfr. Infineon
    Oneyac # A-IPAN80R450P7XKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 full package

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 11A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 450 milliohms @ 4.5A, 10V
    Vgs (th) (maximum value) for different IDs 3.5V @ 220uA
    Input capacitance (Ciss) at different Vds (maximum value) 770pF @ 500V
    Gate charge (Qg) at different Vgs (maximum value) 24nC @ 10V
    Power dissipation (maximum value) 29W(Tc)
    Package/Enclosure TO-220-3 full package
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 800V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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