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Power Mosfet IPAN65R650CE TO-220-3 whole package

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    MPN IPAN65R650CEXKSA1
    Other # IPAN65R650CE
    Mfr. Infineon
    Oneyac # A-IPAN65R650CEXKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 whole package

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    fet type n channel
    Power dissipation (maximum) 28W(Tc)
    Drain-Source Voltage (Vdss) 650V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    On resistance at different Id and Vgs (maximum) 650 milliohm @ 2.1a, 10V
    Input capacitance (Ciss) (maximum) at different Vds 440pF @ 100V
    Current at 25°C-Continuous Drain (Id) 10.1A(Tc)
    Gate charge at different VGS (QG) (maximum) 23nC @ 10V
    technology MOSFET (metal oxide)
    Vgs(Max) ±20V
    FET function Super Knot
    Operating temperature -40°C ~ 150°C(TJ)
    Vgs(th) (maximum) when different Id 3.5V @ 210uA
    Package/Enclosure TO-220-3 whole package
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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