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Power MOSFET IPAN65R650CE TO-220-3 full package

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    MPN IPAN65R650CEXKSA1
    Other # IPAN65R650CE
    Mfr. Infineon
    Oneyac # A-IPAN65R650CEXKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 full package

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 10.1A(Tc)
    FET function Super knot
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 650 milliohms @ 2.1A, 10V
    Vgs (th) (maximum value) for different IDs 3.5V @ 210uA
    Input capacitance (Ciss) at different Vds (maximum value) 440pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 23nC @ 10V
    Power dissipation (maximum value) 28W(Tc)
    Package/Enclosure TO-220-3 full package
    working temperature -40°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 650V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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