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Power MOSFET TO-220-3

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    MPN R6015KNX
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-R6015KNX
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 600V
    Continuous drain current Id 15A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 27.5nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1050pF @ 25V
    Pd power dissipation (Max) 60W(Tc)
    Rds On(Max)@Id,Vgs 290mΩ@6.5A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-220-3
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    In Stock :  100

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 500 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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