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Power Mosfet IPA65R650CE TO-220-3 whole package

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    MPN IPA65R650CEXKSA1
    Other # IPA65R650CE
    Mfr. Infineon
    Oneyac # A-IPA65R650CEXKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 whole package

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Operating temperature -40°C ~ 150°C(TJ)
    On resistance at different Id and Vgs (maximum) 650 milliohm @ 2.1a, 10V
    Power dissipation (maximum) 28W(Tc)
    Current at 25°C-Continuous Drain (Id) 7A(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 440pF @ 100V
    Vgs(th) (maximum) when different Id 3.5V @ 210uA
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Gate charge at different VGS (QG) (maximum) 23nC @ 10V
    technology MOSFET (metal oxide)
    Package/Enclosure TO-220-3 whole package
    Vgs(Max) ±20V
    fet type n channel
    Drain-Source Voltage (Vdss) 650V
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