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Power MOSFET TO-220AB

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    MPN IRFB4620PBF
    Mfr. Infineon
    Oneyac # A3-IRFB4620PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 5V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 38nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1710pF @ 50V
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 38nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1710pF @ 50V
    Package/Enclosure TO-220AB
    Number of channels 1Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 25A
    Rds On(Max)@Id,Vgs 72.5mΩ
    Gate voltage Vgs 20V
    QG gate charge 25nC
    to configure Single
    Pd power dissipation (Max) 144W
    height 15.65mm
    length 10mm
    FET type N-Channel
    width 4.4mm
    Forward transconductance - minimum value 37S
    Descent time 14.8ns
    rise time 22.4ns
    Typical shutdown delay time 25.4ns
    Typical connection delay time 13.4ns
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