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Power MOSFET TO-220AB

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    MPN IRF630NPBF
    Mfr. Infineon
    Oneyac # A-IRF630NPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 35nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 575pF @ 25V
    working temperature -55°C~175°C(TJ)
    Package/Enclosure TO-220AB
    Number of channels 1Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 9.3A
    Rds On(Max)@Id,Vgs 300mΩ
    Gate voltage Vgs 20V
    QG gate charge 23.3nC
    to configure Single
    Pd power dissipation (Max) 82W
    height 15.65mm
    length 10mm
    FET type N-Channel
    width 4.4mm
    Forward transconductance - minimum value 4.9S
    Descent time 15ns
    rise time 14ns
    Typical shutdown delay time 27ns
    Typical connection delay time 7.9ns
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    In Stock :  1,000 Lead Time:14W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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