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Power MOSFET TO-220AB

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    MPN IRFB4127PBF
    Mfr. Infineon
    Oneyac # A3-IRFB4127PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 150nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5380pF @ 50V
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 150nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5380pF @ 50V
    Package/Enclosure TO-220AB
    Number of channels 1Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 76A
    Rds On(Max)@Id,Vgs 20mΩ@44A,10V
    Gate voltage Vgs ±20V
    QG gate charge 100nC
    to configure Single
    Pd power dissipation (Max) 375W
    height 15.65mm
    length 10mm
    FET type N-Channel
    width 4.4mm
    Forward transconductance - minimum value 79S
    Descent time 22ns
    rise time 18ns
    Typical shutdown delay time 56ns
    Typical connection delay time 17ns
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    In Stock :  0 Lead Time:14W

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    Min. 1 Mult. 1

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