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Power MOSFET TO-220AB

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    MPN IRF640NPBF
    Mfr. Infineon
    Oneyac # A36-IRF640NPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 200 V 0.15 Ohm 67 nC 150 W Flange Mount Mosfet - TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 67nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1160pF @ 25V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 150W(Tc)
    Rds On(Max)@Id,Vgs 150mΩ@11A,10V
    working temperature -55°C~175°C(TJ)
    FET type N-Channel
    Continuous drain current Id 18A
    Drain source voltage Vds 200V
    Package/Enclosure TO-220AB
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    In Stock :  4,079

    Qty. Unit Price Ext. Price
    30+ $0.2662 $7.986
    50+ $0.2039 $10.195

    Full Reel (Order in multiples of 1000)

    1,000+ $0.1704 $170.4

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Date: 24+

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