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Power MOSFET 

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    MPN IRLR3110ZTRLPBF
    Mfr. Infineon
    Oneyac # A-IRLR3110ZTRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 100µA
    working temperature -55°C~175°C(TJ)
    Gate charge (Qg) at different Vgs (maximum value) 48nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 3980pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    Continuous drain current Id 63A
    Rds On(Max)@Id,Vgs 16mΩ
    Minimum gate threshold voltage 1V
    pin number 3
    category Power MOSFET
    Pd power dissipation (Max) 140W
    Forward transconductance 52S
    Forward diode voltage 1.3V
    Number of components per chip 1 Ohms
    length 10.67mm
    Typical shutdown delay time 33 ns
    Typical connection delay time 24 ns
    width 9.65mm
    height 4.83mm
    Series HEXFET
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