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Power Mosfet D-Pak

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    MPN IRLR2905TRPBF
    Mfr. Infineon
    Oneyac # A-IRLR2905TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 55 V 40 mOhm 30 nC 110 W Surface Mount Mosfet - TO-252AA

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate Charge (Qg) at Different Vgs (Maximum) 48nC @ 5V
    Gate Charge (Qg) at Different Vgs (Maximum) 48nC @ 5V
    Drain-source voltage Vds 55V
    Series HEXFET®
    Pd-power dissipation (Max) 110W(Tc)
    fet type N-Channel
    Rds On(Max)@Id,Vgs 27mΩ@25A,10V
    Operating temperature -55°C~175°C(TJ)
    Gate voltage Vgs ±16V
    Drive voltage @Rds On (Max), Rds On (Min) 4V,10V
    Continuous Drain Current Id 42A
    Input capacitance (Ciss) at different Vds (maximum) 1700pF @ 25V
    Package/Enclosure D-Pak
    Vgs (th) (maximum) at different Ids 2V @ 250µA
    Input capacitance (Ciss) at different Vds (maximum) 1700pF @ 25V
    Vgs (th) (maximum) at different Ids 2V @ 250µA
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

    In Stock :  0 Lead Time:14W

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 2,000 ETD HK Contact Us
    Min. 1 Mult. 1

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