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Power MOSFET D-Pak

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    MPN IRLR2908TRPBF
    Mfr. Infineon
    Oneyac # A-IRLR2908TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 80 V 30 mOhm 33 nC 120 W Surface Mount Mosfet - TO-252AA

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 33nC @ 4.5V
    Gate voltage Vgs ±16V
    Input capacitance (Ciss) at different Vds (maximum value) 1890pF @ 25V
    Pd power dissipation (Max) 120W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 33nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 1890pF @ 25V
    Rds On(Max)@Id,Vgs 28mΩ@23A,10V
    FET type N-Channel
    Drain source voltage Vds 80V
    Continuous drain current Id 39A
    Package/Enclosure D-Pak
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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