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Power MOSFET 

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    MPN IRLR3636TRLPBF
    Mfr. Infineon
    Oneyac # A-IRLR3636TRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : HEXFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 100µA
    working temperature -55°C~175°C(TJ)
    Gate charge (Qg) at different Vgs (maximum value) 49nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 3779pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 50V
    Continuous drain current Id 99A
    Rds On(Max)@Id,Vgs 8.3mΩ
    Minimum gate threshold voltage 1V
    pin number 3
    category Power MOSFET
    Pd power dissipation (Max) 143W
    length 6.73mm
    height 6.22mm
    Forward transconductance 31S
    Number of components per chip 1 Ohms
    Forward diode voltage 1.3V
    Series HEXFET
    Typical shutdown delay time 43 ns
    Typical connection delay time 45 ns
    width 2.39mm
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