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Power MOSFET TSOT-26

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    MPN DMG6402LVT-7
    Mfr. Diodes Incorporated
    Oneyac # A-DMG6402LVT-7
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 30 V 42 mOhm 11.4 nC 1.75 W Silicon SMT Mosfet - TSOT-26

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 11.4nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 498pF @ 15V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TSOT-26
    Continuous drain current Id 6A
    Pd power dissipation (Max) 1.75W
    QG gate charge 11.4nC
    Rds On(Max)@Id,Vgs 30mΩ
    Drain source voltage Vds 30V
    Gate voltage Vgs 1.5V
    rise time 6.2ns
    Descent time 2.8ns
    Typical shutdown delay time 13.9ns
    Typical connection delay time 3.4ns
    Series DMG6402
    Number of channels 1Channel
    to configure Single
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