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Power MOSFET TO-220AB

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    MPN IRLB3034PBF
    Mfr. Infineon
    Oneyac # A-IRLB3034PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 40 V 375 W 108 nC Hexfet Power Mosfet Flange Mount - TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 162nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 10315pF @ 25V
    working temperature -55°C~175°C
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 162nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 10315pF @ 25V
    Package/Enclosure TO-220AB
    Number of channels 1Channel
    Drain source voltage Vds 40V
    Continuous drain current Id 343A
    Rds On(Max)@Id,Vgs 1.7mΩ@195A,10V
    Gate voltage Vgs ±20V
    QG gate charge 108nC
    to configure Single
    Pd power dissipation (Max) 375W
    height 15.65mm
    length 10mm
    FET type N-Channel
    width 4.4mm
    Forward transconductance - minimum value 286S
    Descent time 355ns
    rise time 827ns
    Typical shutdown delay time 97ns
    Typical connection delay time 65ns
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