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Power MOSFET TO-220AB

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    MPN IRLB4030PBF
    Mfr. Infineon
    Oneyac # A-IRLB4030PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 100 V 4.5 mOhm 87 nC 370 W Silicon Flange Mount Mosfet TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 130nC @ 4.5V
    Gate voltage Vgs ±16V
    Input capacitance (Ciss) at different Vds (maximum value) 11360pF @ 50V
    Pd power dissipation (Max) 370W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 130nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 11360pF @ 50V
    Rds On(Max)@Id,Vgs 4.3mΩ@110A,10V
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 180A
    Package/Enclosure TO-220AB
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    In Stock :  0 Lead Time:14W

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