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Power MOSFET 8-SO

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    MPN IRL6342TRPBF
    Mfr. Infineon
    Oneyac # A-IRL6342TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 30 V 2.5 W 11 nC Hexfet Power Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1.1V @ 10µA
    Gate charge (Qg) at different Vgs (maximum value) 11nC @ 4.5V
    Gate voltage Vgs ±12V
    Input capacitance (Ciss) at different Vds (maximum value) 1025pF @ 25V
    Pd power dissipation (Max) 2.5W(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1.1V @ 10µA
    Gate charge (Qg) at different Vgs (maximum value) 11nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 1025pF @ 25V
    Rds On(Max)@Id,Vgs 14.6mΩ@9.9A,4.5V
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 9.9A
    Package/Enclosure 8-SO
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 4.5V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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