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Power MOSFET 8-SO

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    MPN IRL6372TRPBF
    Mfr. Infineon
    Oneyac # A-IRL6372TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Dual N-Channel 30 V 23 mOhm 11 nC 2 W Silicon Surface Mount Mosfet - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1.1V @ 10µA
    Gate charge (Qg) at different Vgs (maximum value) 11nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 1020pF @ 25V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Rds On(Max)@Id,Vgs 17.9mΩ@8.1A,4.5V
    Vgs (th) at different IDs (maximum value) 1.1V @ 10µA
    Gate charge (Qg) at different Vgs (maximum value) 11nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 1020pF @ 25V
    Pd power dissipation (Max) 2W
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 8.1A
    Package/Enclosure 8-SO
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