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Power MOSFET BSC265N10LSFGATMA1

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    MPN BSC265N10LSF G
    Other # BSC265N10LSFGATMA1
    Mfr. Infineon
    Oneyac # A-BSC265N10LSF G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS™

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 40A
    Rds On(Max)@Id,Vgs 20mΩ
    Gate voltage Vgs 20V
    QG gate charge 21nC
    to configure Single
    Pd power dissipation (Max) 78W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 21S
    Descent time 4ns
    rise time 24ns
    Typical shutdown delay time 20ns
    Typical connection delay time 10ns
    working temperature -55°C~150°C
    Series OptiMOS™
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