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Power MOSFET BSC22DN20NS3GATMA1

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    MPN BSC22DN20NS3 G
    Other # BSC22DN20NS3GATMA1
    Mfr. Infineon
    Oneyac # A-BSC22DN20NS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 430pF @ 100V
    working temperature -55°C~150°C(TJ)
    Drain source voltage Vds 200V
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 13µA
    Gate charge (Qg) at different Vgs (maximum value) 5.6nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 7A
    Rds On(Max)@Id,Vgs 194mΩ
    Gate voltage Vgs 20V
    QG gate charge 5.6nC
    to configure Single
    Pd power dissipation (Max) 34W
    height 1.27mm
    length 5.9mm
    Series OptiMOS3
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 3.5S
    Descent time 3ns
    rise time 4ns
    Typical shutdown delay time 6ns
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