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Power MOSFET BSC159N10LSFGATMA1

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    MPN BSC159N10LSF G
    Other # BSC159N10LSFGATMA1
    Mfr. Infineon
    Oneyac # A-BSC159N10LSF G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 9.4A
    Rds On(Max)@Id,Vgs 15.9mΩ
    Gate voltage Vgs 20V
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 114W
    height 1.27mm
    length 5.9mm
    Series OptiMOS2
    FET type N-Channel
    width 5.15mm
    Descent time 6ns
    rise time 24ns
    Typical shutdown delay time 28ns
    Typical connection delay time 13ns
    working temperature -55°C~150°C
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