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Power MOSFET BSC500N20NS3GATMA1 PG-TDSON-8

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    MPN BSC500N20NS3 G
    Other # BSC500N20NS3GATMA1
    Mfr. Infineon
    Oneyac # A-BSC500N20NS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PG-TDSON-8 Series : OptiMOS™

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 24A
    Rds On(Max)@Id,Vgs 50mΩ@22A,10V
    Gate voltage Vgs ±20V
    QG gate charge 20nC
    to configure Single
    Pd power dissipation (Max) 96W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 19S
    Descent time 7ns
    rise time 5ns
    Typical shutdown delay time 28ns
    Typical connection delay time 14ns
    working temperature -55°C~150°C
    Package/Enclosure PG-TDSON-8
    Series OptiMOS™
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