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Power MOSFET BSC900N20NS3GATMA1 PG-TDSON-8-5

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    MPN BSC900N20NS3 G
    Other # BSC900N20NS3GATMA1
    Mfr. Infineon
    Oneyac # A-BSC900N20NS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PG-TDSON-8-5 Series : OptiMOS™

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 15.2A
    Rds On(Max)@Id,Vgs 90mΩ@7.6A,10V
    Gate voltage Vgs ±20V
    QG gate charge 9nC
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 62.5W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 8S
    Descent time 3ns
    rise time 4ns
    Typical shutdown delay time 10ns
    Typical connection delay time 5ns
    working temperature -55°C~150°C
    Package/Enclosure PG-TDSON-8-5
    Series OptiMOS™
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    In Stock :  5,000 Lead Time:22W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 5,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1