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Power MOSFET BSC123N08NS3GATMA1

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    MPN BSC123N08NS3 G
    Other # BSC123N08NS3GATMA1
    Mfr. Infineon
    Oneyac # A-BSC123N08NS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 80V
    Continuous drain current Id 55A
    Rds On(Max)@Id,Vgs 10.3mΩ
    Gate voltage Vgs 20V
    QG gate charge 25nC
    to configure Single
    Pd power dissipation (Max) 66W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 22S
    Descent time 4ns
    rise time 18ns
    Typical shutdown delay time 19ns
    Typical connection delay time 12ns
    working temperature -55°C~150°C
    Series OptiMOS™
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    In Stock :  5,000 Lead Time:22W

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