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Power MOSFET IPD60R360P7S TO-252-3

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    MPN IPD60R360P7SAUMA1
    Other # IPD60R360P7S
    Mfr. Infineon
    Oneyac # A36-IPD60R360P7SAUMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Package/Enclosure TO-252-3
    FET type N-Channel
    Pd power dissipation (Max) 41W
    Rds On(Max)@Id,Vgs 360mΩ@2.7A,10V
    working temperature -40°C~150°C
    Gate voltage Vgs ±20V
    Drain source voltage Vds 600V
    Continuous drain current Id 9A
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    In Stock :  304

    Qty. Unit Price Ext. Price
    20+ $0.5309 $10.618
    100+ $0.4092 $40.92

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 22+

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