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Power Mosfet TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD60R360P7SE8228AUMA1
    Mfr. Infineon
    Oneyac # A-IPD60R360P7SE8228AUMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Documents

    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate charge at different VGS (QG) (maximum) 13nC @ 10V
    Vgs(th) (maximum) when different Id 4V @ 140uA
    Current at 25°C-Continuous Drain (Id) 9A(Tc)
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 600V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Vgs(Max) ±20V
    fet type n channel
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    On resistance at different Id and Vgs (maximum) 360 milliohm @ 2.7A, 10V
    Power dissipation (maximum) 41W(Tc)
    Operating temperature -40°C ~ 150°C(TJ)
    Input capacitance (Ciss) (maximum) at different Vds 555pF @ 400V
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