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Power Mosfet IPD60R600P7S TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD60R600P7SAUMA1
    Other # IPD60R600P7S
    Mfr. Infineon
    Oneyac # A36-IPD60R600P7SAUMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Current at 25°C-Continuous Drain (Id) 6A(Tc)
    fet type n channel
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 600 milliohm @ 1.7A, 10V
    Vgs(th) (maximum) when different Id 4V @ 80uA
    Input capacitance (Ciss) (maximum) at different Vds 363pF @ 400V
    Gate charge at different VGS (QG) (maximum) 9nC @ 10V
    Power dissipation (maximum) 30W(Tc)
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    Operating temperature -40°C ~ 150°C(TJ)
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 600V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
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    In Stock :  118

    Qty. Unit Price Ext. Price
    20+ $0.4289 $8.578
    100+ $0.3302 $33.02

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 22+

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