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Power MOSFET 8-SO

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    MPN IRF7351TRPBF
    Mfr. Infineon
    Oneyac # A36-IRF7351TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Dual N-Channel 60 V 17.8 mOhm 36 nC 2 W Silicon Surface Mount Mosfet - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 36nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1330pF @ 30V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Rds On(Max)@Id,Vgs 17.8mΩ@8A,10V
    Vgs (th) at different IDs (maximum value) 4V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 36nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1330pF @ 30V
    Pd power dissipation (Max) 2W
    FET type N-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 8A
    Package/Enclosure 8-SO
    Gate voltage Vgs ±20V
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    In Stock :  682

    Qty. Unit Price Ext. Price
    20+ $0.6374 $12.748
    100+ $0.5324 $53.24

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 4,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 23+

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