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Power MOSFET SO

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    MPN DMN6040SSD-13
    Mfr. Diodes Incorporated
    Oneyac # A3-DMN6040SSD-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    MOSFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    to configure Dual
    Forward transconductance - minimum value 4.5 S
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 22.4nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1287pF @ 25V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SO
    Continuous drain current Id 5A
    Pd power dissipation (Max) 1.7W
    QG gate charge 22.4nC
    Rds On(Max)@Id,Vgs 40mΩ
    Drain source voltage Vds 60V
    Gate voltage Vgs 1V
    rise time 8.1ns
    Descent time 4ns
    Typical shutdown delay time 20.1ns
    Typical connection delay time 6.6ns
    FET type 2N-Channel
    Forward transconductance - minimum value 4.5S
    Series DMN6040
    Number of channels 2Channel
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    In Stock :  5,250 Lead Time:12W

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