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Power MOSFET D2PAK

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    MPN IRF9530NSTRLPBF
    Mfr. Infineon
    Oneyac # A36-IRF9530NSTRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single HexFet -100 V 3.8 W 58 nC Surface Mount Mosfet - TO-263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 3.8W(Ta),79W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 58nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 760pF @ 25V
    Rds On(Max)@Id,Vgs 200mΩ@8.4A,10V
    FET type P-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 14A
    Gate charge (Qg) at different Vgs (maximum value) 58nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Input capacitance (Ciss) at different Vds (maximum value) 760pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    Package/Enclosure D2PAK
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    In Stock :  244

    Qty. Unit Price Ext. Price
    20+ $0.5126 $10.252
    50+ $0.4092 $20.46

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 800 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 22+

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