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Power MOSFET 8-SO

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    MPN IRF7832TRPBF
    Mfr. Infineon
    Oneyac # A36-IRF7832TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 30 V 2.5 W 34 nC Hexfet Power Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.32V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 51nC @ 4.5V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 4310pF @ 15V
    Pd power dissipation (Max) 2.5W(Ta)
    working temperature -55°C~155°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.32V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 51nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 4310pF @ 15V
    Rds On(Max)@Id,Vgs 4mΩ@20A,10V
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 20A
    Package/Enclosure 8-SO
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    In Stock :  4,000

    Qty. Unit Price Ext. Price
    20+ $0.4746 $9.492
    100+ $0.3803 $38.03
    1,000+ $0.3392 $339.2
    2,000+ $0.3195 $639

    Full Reel (Order in multiples of 4000)

    4,000+ $0.3043 $1,217.2

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 4,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: Within 5 years

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