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Power MOSFET 8-SO

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    MPN IRF7103TRPBF
    Mfr. Infineon
    Oneyac # A36-IRF7103TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Dual N-Channel 50 V 2 W 12 nC Hexfet Power Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 30nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 290pF @ 25V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Rds On(Max)@Id,Vgs 130mΩ@3A,10V
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 30nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 290pF @ 25V
    Pd power dissipation (Max) 2W
    FET type N-Channel
    Drain source voltage Vds 50V
    Continuous drain current Id 3A
    Package/Enclosure 8-SO
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    In Stock :  1,533

    Qty. Unit Price Ext. Price
    40+ $0.2252 $9.008
    100+ $0.1811 $18.11
    1,000+ $0.1613 $161.3

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 4,000 ETD HK 1~2 Weeks
    Min. 40 Mult. 1

    Special Note

    Production Date: 23+

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