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Power MOSFET TO-220-3

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    MPN R8009KNXC7G
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-R8009KNXC7G
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 9A(Ta)
    FET type N-Channel
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 600 milliohms @ 4.5A, 10V
    Vgs (th) (maximum value) for different IDs 4.5V @ 5mA
    Input capacitance (Ciss) at different Vds (maximum value) 900 pF @ 100 V
    Gate charge (Qg) at different Vgs (maximum value) 27 nC @ 10 V
    Power dissipation (maximum value) 59W(Tc)
    Package/Enclosure TO-220-3
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 800 V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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    In Stock :  592

    Qty. Unit Price Ext. Price
    4+ $5.5068 $22.0272
    10+ $4.1301 $41.301
    50+ $3.6385 $181.925
    100+ $3.1072 $310.72
    500+ $2.8912 $1,445.6

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 4 Mult. 1

    Special Note

    Production Year: 2022

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