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Power MOSFET TO-220-3

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    MPN R8010ANX
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-R8010ANX
    Supplier Oneyac
    Product Cycle

    Production (Not Recommended for New Design)

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 62nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1750pF @ 25V
    working temperature 150°C(TJ)
    Package/Enclosure TO-220-3
    Continuous drain current Id 10A
    Pd power dissipation (Max) 40W
    QG gate charge 62nC
    Rds On(Max)@Id,Vgs 560mΩ
    Drain source voltage Vds 800V
    Gate voltage Vgs 3V
    rise time 54ns
    Descent time 25ns
    Typical shutdown delay time 97ns
    Typical connection delay time 43ns
    width 10.3mm
    Forward transconductance - minimum value 2.2S
    Series R8010ANX
    Number of channels 1Channel
    to configure Single
    length 15.4mm
    height 4.8mm
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    In Stock :  100

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 500 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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