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Power Mosfet TO-220-3

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    MPN R8010ANX
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-R8010ANX
    Supplier Oneyac
    Product Cycle

    Production (Not Recommended for New Design)

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Vgs (th) (maximum) at different Ids 5V @ 1mA
    Gate Charge (Qg) at Different Vgs (Maximum) 62nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum) 1750pF @ 25V
    Operating temperature 150°C(TJ)
    Package/Enclosure TO-220-3
    Continuous Drain Current Id 10A
    Pd-power dissipation (Max) 40W
    Qg-gate charge 62nC
    Rds On(Max)@Id,Vgs 560mΩ
    Drain-source voltage Vds 800V
    Gate voltage Vgs 3V
    Rise Time 54ns
    Fall time 25ns
    Typical off delay time 97ns
    Typical on-delay time 43ns
    width 10.3mm
    Forward Transconductance-Minimum 2.2S
    Series R8010ANX
    Number of channels 1Channel
    Configuration Single
    length 15.4mm
    height 4.8mm
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    In Stock :  125

    Qty. Unit Price Ext. Price
    5+ $4.0827 $20.4135
    10+ $3.424 $34.24
    50+ $3.0283 $151.415
    100+ $2.6977 $269.77

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 500 ETD HK 1~2 Weeks
    Min. 5 Mult. 1

    Special Note

    Production Year: 2020

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