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General MOSFET TO-220-3

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    MPN R8009KNXC7G
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-R8009KNXC7G
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category General MOSFET
    Current at 25°C-Continuous Drain (Id) 9A(Ta)
    fet type N-Channel
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 600 milliohm @ 4.5a, 10V
    Vgs(th) (maximum) when different Id 4.5V @ 5mA
    Input capacitance (Ciss) (maximum) at different Vds 900 pF @ 100 V
    Gate charge at different VGS (QG) (maximum) 27 nC @ 10 V
    Power dissipation (maximum) 59W(Tc)
    Package/Enclosure TO-220-3
    Operating temperature 150°C(TJ)
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 800 V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
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    In Stock :  50 Lead Time:14W

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    MPQ 50 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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