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Power MOSFET TO-220-3

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MPN R8009KNXC7G
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A3-R8009KNXC7G
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description
Package/Enclosure : TO-220-3

Specifications FAQ

Description Details Operation
Product Category Power MOSFET
Current at 25 ° C - Continuous Drain (Id) 9A(Ta)
FET type N-Channel
Vgs (maximum value) ±20V
On resistance at different Id and Vgs (maximum value) 600 milliohms @ 4.5A, 10V
Vgs (th) (maximum value) for different IDs 4.5V @ 5mA
Input capacitance (Ciss) at different Vds (maximum value) 900 pF @ 100 V
Gate charge (Qg) at different Vgs (maximum value) 27 nC @ 10 V
Power dissipation (maximum value) 59W(Tc)
Package/Enclosure TO-220-3
working temperature 150°C(TJ)
technology MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 800 V
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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In Stock :  10 Lead Time:16W

Qty. Unit Price Ext. Price
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When unpacking without original label and tray!
MPQ 50 ETD HK 5~17 Working Days
Min. 1 Mult. 1

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