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Power MOSFET 8-PowerVDFN

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    MPN RQ3E080BNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-RQ3E080BNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerVDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 8A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 14.5nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 660pF @ 15V
    Pd power dissipation (Max) 2W(Ta)
    Rds On(Max)@Id,Vgs 15.2mΩ@8A,10V
    working temperature 150°C(TJ)
    Package/Enclosure 8-PowerVDFN
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

    In Stock :  200

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