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Power MOSFET TO-263S-3

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    MPN R8002ANJFRGTL
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-R8002ANJFRGTL
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263S-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Package/Enclosure TO-263S-3
    Number of channels 1 Channel
    Drain source voltage Vds 800V
    Continuous drain current Id 2A
    Rds On(Max)@Id,Vgs 4.3Ω
    Gate voltage Vgs 30V
    QG gate charge 13 nC
    to configure Single
    Pd power dissipation (Max) 62W
    working temperature -55°C~150°C
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    In Stock :  100

    Qty. Unit Price Ext. Price
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    MPQ 1,000 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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