Power MOSFET N-Channel 800V 5A(Tc) ±30V 40W(Tc) 2.08Ω@2.5A,10V 150°C(TJ) TO-220-3
| MPN | R8005ANX |
|---|---|
| Mfr. |
ROHM Semiconductor
Authorized Distributor
|
| Oneyac # | A3-R8005ANX |
| Supplier | Oneyac |
| Product Cycle |
Production (Not Recommended for New Design) |
| Unleaded/RoHs |
Lead Free/Rohs
|
| Description | N-Channel 800V 5A(Tc) ±30V 40W(Tc) 2.08Ω@2.5A,10V 150°C(TJ) TO-220-3 |
Documents Send to email
| Datasheet |
|---|
Specifications FAQ
| Product Attribute | Attribute Value | Operation |
|---|---|---|
| Product Category | Power MOSFET | |
| FET type | N-Channel | |
| Drain source voltage Vds | 800V | |
| Continuous drain current Id | 5A(Tc) | |
| Drive voltage @ Rds On (Max), Rds On (Min) | 10V | |
| Vgs (th) at different IDs (maximum value) | 5V @ 1mA | |
| Gate charge (Qg) at different Vgs (maximum value) | 21nC @ 10V | |
| Gate voltage Vgs | ±30V | |
| Input capacitance (Ciss) at different Vds (maximum value) | 485pF @ 25V | |
| Pd power dissipation (Max) | 40W(Tc) | |
| Rds On(Max)@Id,Vgs | 2.08Ω@2.5A,10V | |
| working temperature | 150°C(TJ) | |
| Package/Enclosure | TO-220-3 |
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