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Power MOSFET TO-220-3

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MPN R8005ANX
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A3-R8005ANX
Supplier Oneyac
Product Cycle

Production (Not Recommended for New Design)

Unleaded/RoHs Lead Free/Rohs
Description
Package/Enclosure : TO-220-3

Specifications FAQ

Description Details Operation
Product Category Power MOSFET
FET type N-Channel
Drain source voltage Vds 800V
Continuous drain current Id 5A(Tc)
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 5V @ 1mA
Gate charge (Qg) at different Vgs (maximum value) 21nC @ 10V
Gate voltage Vgs ±30V
Input capacitance (Ciss) at different Vds (maximum value) 485pF @ 25V
Pd power dissipation (Max) 40W(Tc)
Rds On(Max)@Id,Vgs 2.08Ω@2.5A,10V
working temperature 150°C(TJ)
Package/Enclosure TO-220-3
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In Stock :  100

Qty. Unit Price Ext. Price
1+ : Inquiry
When unpacking without original label and tray!
MPQ 500 ETD HK 5~17 Working Days
Min. 1 Mult. 1

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