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Power Mosfet IPP60R099P7 TO-220-3

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    MPN IPP60R099P7XKSA1
    Other # IPP60R099P7
    Mfr. Infineon
    Oneyac # A-IPP60R099P7XKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drain-Source Voltage (Vdss) 600V
    Current at 25°C-Continuous Drain (Id) 31A(Tc)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Operating temperature -55°C ~ 150°C(TJ)
    Package/Enclosure TO-220-3
    fet type n channel
    On resistance at different Id and Vgs (maximum) 99 milliohm @ 10.5a, 10V
    Vgs(th) (maximum) when different Id 4V @ 530uA
    technology MOSFET (metal oxide)
    Power dissipation (maximum) 117W(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 1952pF @ 400V
    Gate charge at different VGS (QG) (maximum) 45nC @ 10V
    Vgs(Max) ±20V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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