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Power MOSFET IPP60R099C6 TO-220-3

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    MPN IPP60R099C6XKSA1
    Other # IPP60R099C6
    Mfr. Infineon
    Oneyac # A-IPP60R099C6XKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 37.9A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 99 milliohms @ 18.1A, 10V
    Vgs (th) (maximum value) for different IDs 3.5V @ 1.21mA
    Input capacitance (Ciss) at different Vds (maximum value) 2660pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 119nC @ 10V
    Power dissipation (maximum value) 278W(Tc)
    Package/Enclosure TO-220-3
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 600V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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