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Power MOSFET IPP60R125P6 TO-220-3

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    MPN IPP60R125P6XKSA1
    Other # IPP60R125P6
    Mfr. Infineon
    Oneyac # A-IPP60R125P6XKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3 Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    On resistance at different Id and Vgs (maximum) 125 milliohm @ 11.6a, 10V
    Gate charge at different VGS (QG) (maximum) 56nC @ 10V
    Vgs(Max) ±20V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    technology MOSFET (metal oxide)
    Current at 25°C-Continuous Drain (Id) 30A(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 2660pF @ 100V
    fet type n channel
    Power dissipation (maximum) 219W(Tc)
    Vgs(th) (maximum) when different Id 4.5V @ 960uA
    Drain-Source Voltage (Vdss) 600V
    Package/Enclosure TO-220-3
    Operating temperature -55°C ~ 150°C(TJ)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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