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Power Mosfet IPD25N06S4L-30 TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD25N06S4L30ATMA2
    Other # IPD25N06S4L-30
    Mfr. Infineon
    Oneyac # A-IPD25N06S4L30ATMA2
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Operating temperature -55°C ~ 175°C(TJ)
    Vgs(Max) ±16V
    On resistance at different Id and Vgs (maximum) 30 milliohms @ 25A, 10V
    Vgs(th) (maximum) when different Id 2.2V @ 8uA
    fet type n channel
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 60V
    Gate charge at different VGS (QG) (maximum) 16.3nC @ 10V
    Current at 25°C-Continuous Drain (Id) 25A(Tc)
    Power dissipation (maximum) 29W(Tc)
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    Input capacitance (Ciss) (maximum) at different Vds 1220pF @ 25V
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