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Universal MOSFET CPT3

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    MPN RSD221N06TL
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RSD221N06TL
    Supplier Oneyac
    Product Cycle

    Production (Not Recommended for New Design)

    Unleaded/RoHs YES
    Description
    Package/Enclosure : CPT3

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    working temperature 150°C(TJ)
    Drive voltage (maximum RdsOn, minimum RdsOn) 4V,10V
    technology MOSFET (Metal Oxide)
    FET type N channels
    Leakage source voltage (Vdss) 60V
    Input capacitance (Ciss) at different Vds (maximum value) 1500pF @ 10V
    Package/Enclosure CPT3
    Current at 25 ° C - Continuous Drain (Id) 22A(Tc)
    Vgs (th) (maximum value) for different IDs 3V @ 1mA
    Power dissipation (maximum value) 850mW(Ta),20W(Tc)
    What is the gate charge at different Vgs? (Qg) (maximum value) 30nC @ 10V
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 26 milliohms @ 22A, 10V
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    In Stock :  2,500

    Qty. Unit Price Ext. Price
    30+ $0.799 $23.97
    50+ $0.7063 $35.315
    100+ $0.6294 $62.94
    500+ $0.6281 $314.05
    1,000+ $0.6268 $626.8
    2,000+ $0.6241 $1,248.2

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Year: 2022

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