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Power MOSFET IPD26N06S2L-35 TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD26N06S2L35ATMA2
    Other # IPD26N06S2L-35
    Mfr. Infineon
    Oneyac # A-IPD26N06S2L35ATMA2
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63 Operating temperature : -55°C ~ 175°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs(Max) ±20V
    Gate charge at different VGS (QG) (maximum) 24nC @ 10V
    technology MOSFET (metal oxide)
    On resistance at different Id and Vgs (maximum) 35 milliohm @ 13a, 10V
    Power dissipation (maximum) 68W(Tc)
    Drain-Source Voltage (Vdss) 55V
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    Vgs(th) (maximum) when different Id 2V @ 26uA
    Operating temperature -55°C ~ 175°C(TJ)
    fet type n channel
    Input capacitance (Ciss) (maximum) at different Vds 621pF @ 25V
    Current at 25°C-Continuous Drain (Id) 30A(Tc)
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
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