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Power Mosfet IPD12CN10N G TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD12CN10NGATMA1
    Other # IPD12CN10N G
    Mfr. Infineon
    Oneyac # A-IPD12CN10NGATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(th) (maximum) when different Id 4V @ 83uA
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    On resistance at different Id and Vgs (maximum) 12.4 milliohm @ 67a, 10V
    fet type n channel
    Current at 25°C-Continuous Drain (Id) 67A(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 4320pF @ 50V
    technology MOSFET (metal oxide)
    Vgs(Max) ±20V
    Operating temperature -55°C ~ 175°C(TJ)
    Power dissipation (maximum) 125W(Tc)
    Gate charge at different VGS (QG) (maximum) 65nC @ 10V
    Drain-Source Voltage (Vdss) 100V
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