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Power Mosfet IPD135N03L G DPAK (TO-252)

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    MPN IPD135N03LGBTMA1
    Other # IPD135N03L G
    Mfr. Infineon
    Oneyac # A-IPD135N03LGBTMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : DPAK (TO-252)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Rds On(Max)@Id,Vgs 25 m0hms
    fet type N-Channel
    Minimum Gate Threshold Voltage 1V
    Transistor Configuration Single
    Gate voltage Vgs 2.2V
    Drain-source voltage Vds 30 V
    height 2.41mm
    Working temperature +175 °C
    Drain-source voltage Vds 770 pF @ 15 V
    Continuous Drain Current Id 30 A
    Number Of Components Per Chip 1 Ohms
    Typical on-delay time 3 ns
    Package/Enclosure DPAK (TO-252)
    Series OptiMOS 3
    Gate voltage Vgs -20 V、+20 V
    width 6.22mm
    length 6.73mm
    Typical Off-Delay Time 12 ns
    Pd-power dissipation (Max) 31W
    Number Of Pins 3
    Transistor Material Si
    fet type Enhance
    Minimum working temperature -55 °C
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