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MOSFET TO-252-3

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    MPN DMTH8012LK3Q-13
    Mfr. Diodes Incorporated
    Oneyac # A-DMTH8012LK3Q-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 2.6W(Ta)
    RdsOn(Max)@Id,Vgs 16mΩ@12A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 2051 pF @ 40 V
    Gate charge (Qg) at different Vgs (maximum value) 46.8 nC @ 10 V
    Package/Enclosure TO-252-3
    working temperature -55℃~175℃(TJ)
    Drain source voltage Vds 80V
    Continuous drain current Id 50A(Tc)
    driving voltage 4.5V,10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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