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Power Mosfet TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB65R190C7ATMA2
    Mfr. Infineon
    Oneyac # A-IPB65R190C7ATMA2
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Operating temperature -55°C ~ 150°C(TJ)
    Power dissipation (maximum) 72W(Tc)
    On resistance at different Id and Vgs (maximum) 190 milliohm @ 5.7a, 10V
    Drain-Source Voltage (Vdss) 650V
    Input capacitance (Ciss) (maximum) at different Vds 1150pF @ 400V
    Vgs(th) (maximum) when different Id 4V @ 290uA
    fet type n channel
    Gate charge at different VGS (QG) (maximum) 23nC @ 10V
    Current at 25°C-Continuous Drain (Id) 13A(Tc)
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Vgs(Max) ±20V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    technology MOSFET (metal oxide)
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