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Power Mosfet IPB65R110CFDA TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB65R110CFDAATMA1
    Other # IPB65R110CFDA
    Mfr. Infineon
    Oneyac # A-IPB65R110CFDAATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Operating temperature -40°C ~ 150°C(TJ)
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Current at 25°C-Continuous Drain (Id) 31.2A(Tc)
    Drain-Source Voltage (Vdss) 650V
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 4.5V @ 1.3mA
    Power dissipation (maximum) 277.8W(Tc)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Gate charge at different VGS (QG) (maximum) 118nC @ 10V
    technology MOSFET (metal oxide)
    fet type n channel
    On resistance at different Id and Vgs (maximum) 110 milliohm @ 12.7a, 10V
    Input capacitance (Ciss) (maximum) at different Vds 3240pF @ 100V
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